掺硼直拉单晶硅棒不同位置硅片制备的PERC电池光衰及复原

袁帅; 艾斌; 张卫民; 庞毅聪; 何溢懿; 杨锦; 吴浩彬; 叶雄新; 杨江海; 孙小菩; 梁学勤

doi:10.13471/j.cnki.acta.snus.2020.01.12.2020B003

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掺硼直拉单晶硅棒不同位置硅片制备的PERC电池光衰及复原

研究论文 | 更新时间：2023-11-01

- 掺硼直拉单晶硅棒不同位置硅片制备的PERC电池光衰及复原
- LID and regeneration of PERC solar cells fabricated on different silicon wafers from one boron-doped Czochralski silicon rod
- 中山大学学报(自然科学版) 2020年59卷第6期页码：93-101
- 作者机构：
  
  1.中山大学材料科学与工程学院，广东广州510275
  2.广东省光伏技术重点实验室，广东广州510006
  3.东莞南玻光伏科技有限公司，广东东莞 523141
  4.宜昌南玻硅材料有限公司，湖北宜昌 443007
- 作者简介：
  
  袁帅（1996年生），男；研究方向：太阳能材料与太阳电池；E-mail：153166435@qq.com
  艾斌（1973年生），男；研究方向：太阳能材料与太阳电池；E-mail：stsab@mail.sysu.edu.cn
- 基金信息：
  
  国家自然科学基金(61774171)
- DOI：10.13471/j.cnki.acta.snus.2020.01.12.2020B003
  中图分类号： TM615
- 纸质出版日期：2020-11-25，
  
  收稿日期：2020-01-12，
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袁帅,艾斌,张卫民等.掺硼直拉单晶硅棒不同位置硅片制备的PERC电池光衰及复原[J].中山大学学报(自然科学版),2020,59(06):93-101.

YUAN Shuai,AI Bin,ZHANG Weimin,et al.LID and regeneration of PERC solar cells fabricated on different silicon wafers from one boron-doped Czochralski silicon rod[J].Acta Scientiarum Naturalium Universitatis Sunyatseni,2020,59(06):93-101.
袁帅,艾斌,张卫民等.掺硼直拉单晶硅棒不同位置硅片制备的PERC电池光衰及复原[J].中山大学学报(自然科学版),2020,59(06):93-101. DOI： 10.13471/j.cnki.acta.snus.2020.01.12.2020B003.

YUAN Shuai,AI Bin,ZHANG Weimin,et al.LID and regeneration of PERC solar cells fabricated on different silicon wafers from one boron-doped Czochralski silicon rod[J].Acta Scientiarum Naturalium Universitatis Sunyatseni,2020,59(06):93-101. DOI： 10.13471/j.cnki.acta.snus.2020.01.12.2020B003.

摘要

为了探究产业化发射极和背面钝化电池（Passivated Emitter and Rear Cells，简称PERC电池）光衰以及复原随硅片在硅棒位置的变化规律，将一根产业化掺硼直拉单晶硅棒从头至尾每隔一定距离进行切割得到6组硅片。在测量了硼、氧、碳、过渡金属杂质含量以及少子寿命之后，采用标准化工业过程将它们制成PERC电池。然后，使用太阳电池I-V特性测试仪测量在45 ℃、1 sun、12 h光衰→100 ℃、1 sun、24 h复原→45 ℃、1 sun、12 h再光衰实验中各参数随时间的变化。结果表明，尾部硅片制备的PERC电池的效率、开路电压和短路电流具有最高的复原上升幅度，在第二次光衰时其不仅效率最高而且最初光衰的幅度也较小，这说明100 ℃、1 sun光强、24 h的复原条件足以让PERC电池内部的硼氧缺陷近乎完全失活。第二次光衰时效率在初始阶段的小幅光衰可归因于未达到复原状态的硼氧缺陷所致，也证明了达到复原状态的硼氧缺陷具有很好的抗光衰性能。

Abstract

In order to investigate the variation of light-induced-degradation （LID） and regeneration of industrial Passivated Emitter and Rear Cells （PERC solar cells） with the positions of silicon wafers on a silicon rod， six groups of silicon wafers were cut from one industrial boron-doped Cz-Si rod from top to bottom with a certain distance. After measuring concentration of boron， oxygen， carbon and transition metal impurities as well as minority carrier lifetime， the wafers were made into PERC solar cells using standard industrial processes. Then， the changes of their parameters with time were measured by using a solar cell I-V characteristic tester during the 1st LID （45 ℃， 1 sun， 12 h）， regeneration （100 ℃， 1 sun， 24 h） and 2nd LID （45 ℃， 1 sun， 12 h）. The results show that the PERC solar cells made from bottom silicon wafers show the largest rising extent in efficiency， open-circuit voltage and short-circuit current during the regeneration， and possess the highest efficiencies with only slight LID at the initial stage during the 2nd LID. The results demonstrate that the regeneration treatment with the condition of 100 ℃， 1sun light intensity， and 24 hours can nearly completely inactivate B-O defects inside the PERC solar cells. The slight LID of the efficiencies at the initial stage of the 2nd LID process can be attributed to the boon-oxygen defects not reaching regeneration state yet， which confirm that boron oxygen defects at the regeneration state have good anti-LID performance at the meantime.

关键词

掺硼直拉单晶硅PERC电池光致衰减复原

Keywords

boron-doped Czochralski siliconPERC solar celllight induced degradation （LID）regeneration

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