硅片不同表面钝化工艺的稳定性研究

曾湘安; 艾斌; 邓幼俊; 沈辉

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硅片不同表面钝化工艺的稳定性研究

研究论文 | 更新时间：2023-12-11

- 硅片不同表面钝化工艺的稳定性研究
- Study on the Stability of the Silicon Wafers Passivated by Different Surface Passivation Processes
- 中山大学学报(自然科学版)(中英文) 2014年53卷第3期页码：14-19
- 作者机构：
  
  中山大学物理科学与工程技术学院//太阳能系统研究所,广东,广州,510275
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 纸质出版日期：2014，
  
  网络出版日期：2014-5-25，
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曾湘安, 艾斌, 邓幼俊, 等. 硅片不同表面钝化工艺的稳定性研究[J]. 中山大学学报(自然科学版)(中英文), 2014,53(3):14-19.

ZENG Xiang-an, AI Bin, DENG Youjun, et al. Study on the Stability of the Silicon Wafers Passivated by Different Surface Passivation Processes[J]. Acta Scientiarum Naturalium Universitatis SunYatseni, 2014,53(3):14-19.
曾湘安, 艾斌, 邓幼俊, 等. 硅片不同表面钝化工艺的稳定性研究[J]. 中山大学学报(自然科学版)(中英文), 2014,53(3):14-19. DOI：

ZENG Xiang-an, AI Bin, DENG Youjun, et al. Study on the Stability of the Silicon Wafers Passivated by Different Surface Passivation Processes[J]. Acta Scientiarum Naturalium Universitatis SunYatseni, 2014,53(3):14-19. DOI：

摘要

研究分析了热氧化钝化，用PECVD双面沉积SiN

:H 膜钝化以及碘酒钝化三种表面钝化工艺的稳定性，通过WT-2000少子寿命测试仪对采用这三种钝化工艺的单晶硅片，多晶硅片以及物理提纯硅片在暗条件不同储存时间的少子寿命进行测量，分析得到三种表面钝化工艺的效果以及稳定性。研究结果表明：碘酒钝化效果好，用PECVD双面沉积SiN

:H 膜钝化和热氧化钝化稳定性好。

Abstract

The relationship of minority carrier lifetime of various silicon wafers with the time stored in dark condition was investigated by using WT2000 tester. The silicon wafers include the primary wafer

the chemical thinned wafer

the wafer passivated by thermal oxidation

the wafer passivated by SiN

:H film deposited by plasma enhanced chemical vapor deposition (PECVD) and the wafer passivated by iodine solution. Three types of silicon wafers are B-doped CZ-silicon

Bdoped Multicrystalline (MC) silicon

B-doped upgraded-metallurgical-grade(UMG) silicon. As the results from fifteen types of silicon wafer specimens in total were used. Then the stability of the different surface passivation processes was studied. Finally

it was found that the passivation effect of iodine passivation is better

while the passivation stability of SiN

:H and thermal oxidation passivation is better.

关键词

表面钝化稳定性少子寿命硅片

Keywords

surface passivationstabilityminority carrier lifetimesilicon

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