Research progress on LID caused by B-O defects and its suppression for B-doped p-type crystalline silicon solar cells
中山大学学报(自然科学版)(中英文)2017年56卷第3期 页码:1-7
作者机构:
1. 中山大学材料科学与工程学院,广东,广州,510006
2.
作者简介:
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DOI:
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纸质出版日期:2017,
网络出版日期:2017-5-25,
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艾斌, 邓幼俊. 掺硼 p 型晶体硅太阳电池B-O缺陷致光衰及其抑制的研究进展[J]. 中山大学学报(自然科学版)(中英文), 2017,56(3):1-7.
AI Bin, DENG Youjun. Research progress on LID caused by B-O defects and its suppression for B-doped p-type crystalline silicon solar cells[J]. Acta Scientiarum Naturalium Universitatis SunYatseni, 2017,56(3):1-7.
艾斌, 邓幼俊. 掺硼 p 型晶体硅太阳电池B-O缺陷致光衰及其抑制的研究进展[J]. 中山大学学报(自然科学版)(中英文), 2017,56(3):1-7.DOI:
AI Bin, DENG Youjun. Research progress on LID caused by B-O defects and its suppression for B-doped p-type crystalline silicon solar cells[J]. Acta Scientiarum Naturalium Universitatis SunYatseni, 2017,56(3):1-7.DOI:
Although boron-doped p-type crystalline silicon solar cells have been firmly occupying the dominant share in PV market
the light induced degradation (LID) caused by boron-oxygen (B-O) defects greatly limits their development. Newly-developed B-O defects regeneration technology combining minority carriers injection and heating has the potential to completely solve the LID problems of boron-doped p-type crystalline silicon solar cells. Considering that the research work on LID and its suppression measure is of a great importance to improve long term stability of todays mainstream crystalline silicon solar cells
the authors review the recent research progress on LID and its inhibition method of boron-doped p-type crystalline silicon solar cells
and emphatically introduce the newly-developed B-O defects regeneration technology.
关键词
晶体硅太阳电池硼-氧缺陷光衰复原
Keywords
crystalline silicon solar cellsB-O defectslight induced degradation (LID)regeneration