Structural and Electrical Properties of Fe-doped LaNiO3 Thin Film by Sol-gel Method
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Structural and Electrical Properties of Fe-doped LaNiO3 Thin Film by Sol-gel Method
Acta Scientiarum Naturalium Universitatis SunYatseniVol. 51, Issue 3, Pages: 60-62(2012)
作者机构:
1. .华南农业大学公共基础课实验教学中心,广东,广州,510642
2. 华南农业大学理学院,广东,广州,510642
3. 广东药学院物理与电子学教研室,广东,广州,510006
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Published:2012,
Published Online:25 May 2012,
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CHEN Ruqi, WENG Jiawen, LAO Meimei, et al. Structural and Electrical Properties of Fe-doped LaNiO3 Thin Film by Sol-gel Method. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 51(3):60-62(2012)
DOI:
CHEN Ruqi, WENG Jiawen, LAO Meimei, et al. Structural and Electrical Properties of Fe-doped LaNiO3 Thin Film by Sol-gel Method. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 51(3):60-62(2012)DOI:
Structural and Electrical Properties of Fe-doped LaNiO3 Thin Film by Sol-gel Method
(LNFeO-x)thin films were prepared on (100) Si substrates by a chemical solution deposition method (CSD). Their structure and room temperature resitivity were analyzed. X-ray diffraction show that the thin films annealed at 700 ℃ for 1 h were grown in perovskite structure and no secondary phase was detected. The thin films were smooth
density and crack-free. The room temperature resistivity increases from 1.7 Ω·cm to 3.9 Ω·cm as x increases from 0 to 0.15.