Structural and Electrical Properties of Pb0.5Ba0.5TiO3Thin Film Using a Chemical Solution Deposition Method

CHEN Ruqi; ZHU Guiwen; LIU Wenfang

您当前的位置：

首页 >

文章列表页 >

Structural and Electrical Properties of Pb_0.5Ba_0.5TiO₃Thin Film Using a Chemical Solution Deposition Method

更新时间：2023-12-11

- Structural and Electrical Properties of Pb_0.5Ba_0.5TiO₃Thin Film Using a Chemical Solution Deposition Method
- Acta Scientiarum Naturalium Universitatis SunYatseni Vol. 51, Issue 6, (2012)
- 作者机构：
  
  1. ．华南农业大学公共基础课实验教学中心,广东,广州,510642
  2. 广东药学院基础学院,广东,广州,510006
  3. 韩华新能源（启东）有限公司,江苏,南通,226200
  4. 中山大学物理科学与工程技术学院∥光电材料与技术国家重点实验室,广东,广州,510275
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2012，
  
  Published Online：25 November 2012，
扫描看全文
CHEN Ruqi, ZHU Guiwen, LIU Wenfang. Structural and Electrical Properties of Pb_0.5Ba_0.5TiO₃Thin Film Using a Chemical Solution Deposition Method. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 51(6).(2012)
DOI：

CHEN Ruqi, ZHU Guiwen, LIU Wenfang. Structural and Electrical Properties of Pb_0.5Ba_0.5TiO₃Thin Film Using a Chemical Solution Deposition Method. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 51(6).(2012) DOI：

摘要

采用化学溶液沉积法在Pt/TiO

/SiO

/Si基片上制备钛酸铅钡Pb

0.5

TiO

(PBT) 薄膜。薄膜呈纯钙钛矿结构，无杂相生成。此外，薄膜表面光滑致密、没有微裂痕．薄膜得到的晶粒尺寸较小，约为17 nm。在700 ℃ 1 h退火的薄膜有良好的电学特性，在1 kHz频率下测量得到的介电常数、损耗因子分别约为265和5 %；此外，在500 kV/cm电场驱动下，薄膜得到的剩余极化（2P

）约为16μC/cm

矫顽电场（E

）约为110 kV/cm。这些结果表明，PBT固溶体薄膜有望成为铁电器件的候选材料。

Abstract

0.5

TiO

(PBT) thin films were prepared on Pt/TiO

/SiO

/Si substrates by using a chemical solution deposition method. The thin films were phasepure with perovskite structure

no secondary phase was observed. Meanwhile

they were smooth

density and crack-free with small grain size of about 17 nm. Good electrical properties were observed in the films annealed at 700 ℃ for 1 h. The dielectric constant and the dissipation factor (at 1 kHz) were 265 and 5 %

respectively. Driven by a electric field of 500 kV/cm

PBT showed 2 Pr of and Ec of 110 kV/cm. These suggested that PBT had potentials in applications of ferroelectric devices.

关键词

钛酸铅钡PBT介电铁电化学溶液沉积法

Keywords

Pb0.5Ba0.5TiO3PBTdielectricferroelectricchemical solution deposition method

references

Views

343

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Structural and Electrical Properties of Fe-doped LaNiO₃Thin Film by Sol-gel Method

Structural and Properties of BiFeO₃ Thin Film Using a Chemical Solution Deposition Method

Related Author

WENG Jiawen

LAO Meimei

XU Jun

ZHU Guiwen

CHEN Ruqi

ZHU Guiwen

XU Chudong

Related Institution

College of Science,South China Agricultural University

Guangdong Pharmaceutical University

Center of Experimental Teaching for Common Basic Courses, South China Agricultural University, Guangzhou



School of Basic Courses,Guangdong Pharmaceutical University

Postal code：510275
Tel：020-84112585，84113223 Email：xuebaozr@mail.sysu.edu.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09064830号-19 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰