Bi

1.6

La

0.4

Ti

2

O

7

（BLT） thin films were prepared on ITO glass substrates using a chemical solution deposition method. Their structures

dielectric properties

current-voltage I-V curves and optical constants were analyzed. The result of X-ray diffraction (XRD) analysis showed that the thin films annealed at 500

550 and 600 ℃ for 1h were grown in pyrochlore structure and no secondary phase was detected. Also

the XRD peaks of BLT annealed at 600 ℃ was stronger than those annealed at other temperatures. The dielectric constant and dissipation factor (at 1 kHz) were 114 and 3%

129 and 3%

194 and 6%

respectively

for films annealed 500

550 and 600 ℃. Leakage current densities of BLT thin films versus applied voltage curves suggested that the value of leakage current for films annealed at 600 ℃ was much smaller than those annealed at 500 and 550 ℃. The annealing temperature had little effect on the optical band gap of the films with the values of 3.7 eV. These results indicated that the BLT thin films annealed at 600 ℃ had an excellent property

and they had a potential application in opticoelectric devices.