Study of Silicon Dioxide Masking Layer in IBC Solar Cell

LI Li; JIANG Chenming; HUANG Ming; SHEN Hui

您当前的位置：

首页 >

文章列表页 >

Study of Silicon Dioxide Masking Layer in IBC Solar Cell

更新时间：2023-12-11

- Study of Silicon Dioxide Masking Layer in IBC Solar Cell
- Acta Scientiarum Naturalium Universitatis SunYatseni Vol. 53, Issue 5, Pages: 29-31(2014)
- 作者机构：
  
  中山大学太阳能系统研究所,广东,广州,510006
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2014，
  
  Published Online：25 September 2014，
扫描看全文
LI Li, JIANG Chenming, HUANG Ming, et al. Study of Silicon Dioxide Masking Layer in IBC Solar Cell. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 53(5):29-31(2014)
DOI：

LI Li, JIANG Chenming, HUANG Ming, et al. Study of Silicon Dioxide Masking Layer in IBC Solar Cell. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 53(5):29-31(2014) DOI：

摘要

在叉指状背接触太阳电池（IBC电池）的制作过程中，一种办法是以二氧化硅作为掩膜阻挡磷扩散进入已经扩硼的区域，在有二氧化硅保护的区域，p

区保持不变，在没有二氧化硅保护的地方磷扩散进入形成n

背表面场，从而实现在不同区域的不同扩散。该文是研究在不同的的温度下热氧化得到的二氧化硅氧化层的厚度，厚度从0 nm到124 nm，然后通过测量磷扩散前后方阻变化和ECV图像，研究不同厚度下的二氧化硅掩膜对磷扩散的阻挡作用。同时，还测量了在不同情况下硅片的少子寿命，以确定一个最佳的热氧化二氧化硅工艺，为IBC电池工艺的后续研究提供参考。

Abstract

In the fabrication process of interdigitated back contact (IBC) solar cell，one is using SiO

as a masking layer after boron diffusion and then diffusing phosphorus is used to form local back surface field (LBSF). Under the protection of SiO

the p-type emitter would stay unchanged and the area without SiO

will become n

LBSF. A gap covered with SiO

separates the emitter and LBSF. Thickness of thermal oxidation SiO

in different temperatures

from 0 nm to 124 nm

is investigated. Sheet resistance

minority carrier lifetime and diffusion profile by ECV before and after phosphorus diffusion are measured to see the effect of different silicon dioxide masking layers. With all these factors taken into consideration

the best thermal oxidation technique is determined for the following process of the IBC solar cell.

关键词

IBC太阳电池二氧化硅掩膜方阻少子寿命ECV

Keywords

IBC solar cellSiO2masksheet resistanceminority carrier lifetimeECV

references

Views

422

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Study on the Stability of the Silicon Wafers Passivated by Different Surface Passivation Processes

Related Author

ZENG Xiang-an

AI Bin

DENG Youjun

SHEN Hui

Related Institution

School of Physics Science and Engineering ∥Institute of Solar Energy System, Sun Yatsen university

Postal code：510275
Tel：020-84112585，84113223 Email：xuebaozr@mail.sysu.edu.cn
Technical support is provided by Beijing Founder electronics co., LTD 京ICP备09064830号-19 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰