Structural and Properties of BiFeO3 Thin Film Using a Chemical Solution Deposition Method
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Structural and Properties of BiFeO3 Thin Film Using a Chemical Solution Deposition Method
Acta Scientiarum Naturalium Universitatis SunYatseniVol. 54, Issue 1, Pages: 79-83(2015)
作者机构:
1. .华南农业大学公共基础课实验教学中心,广东,广州,510642
2.
3. 广东药学院基础学院物理与电子学教研室,广东,广州,510006
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Published:2015,
Published Online:25 January 2015,
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CHEN Ruqi, ZHU Guiwen, XU Chudong. Structural and Properties of BiFeO3 Thin Film Using a Chemical Solution Deposition Method. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 54(1):79-83(2015)
DOI:
CHEN Ruqi, ZHU Guiwen, XU Chudong. Structural and Properties of BiFeO3 Thin Film Using a Chemical Solution Deposition Method. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 54(1):79-83(2015)DOI:
Structural and Properties of BiFeO3 Thin Film Using a Chemical Solution Deposition Method
(BFO) thin films were prepared on ITO glass substrates using a chemical solution deposition method. The thin films exhibited pure perovskite structure
no secondary phase was observed. Meanwhile
they were smooth
dense and crack-free with small grain size of about 45 nm. Good electrical properties were observed in the films annealed at 550 ℃ for 1 h. The relative permittivity and the dissipation factor (at 1 kHz) were 198 and 3%
respectively. Driven by a electric field of 760 kV/cm
BFO showed 2P
r
of 25 μC/cm
2
and 2E
c
of 650 kV/cm. The optical band gap of BFO thin films was 2.7 eV. These results indicated that the BFO thin films annealed at 550 ℃ had excellent properties and they had potentials in opticoelectric devices.
关键词
化学溶液沉积法BiFeO3相对介电常数损耗因子光学带隙
Keywords
chemical solution deposition methodBFOrelative permittivitydielectric lossoptical band gap