Although boron-doped p-type crystalline silicon solar cells have been firmly occupying the dominant share in PV market

the light induced degradation (LID) caused by boron-oxygen (B-O) defects greatly limits their development. Newly-developed B-O defects regeneration technology combining minority carriers injection and heating has the potential to completely solve the LID problems of boron-doped p-type crystalline silicon solar cells. Considering that the research work on LID and its suppression measure is of a great importance to improve long term stability of todays mainstream crystalline silicon solar cells

the authors review the recent research progress on LID and its inhibition method of boron-doped p-type crystalline silicon solar cells

and emphatically introduce the newly-developed B-O defects regeneration technology.