Silicon nitride thin films with passivation and anti-reflection properties prepared by mid-frequency magnetron sputtering

SHEN Guosheng; CHEN Wenli; LI Zhong; HONG Ruijiang

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Silicon nitride thin films with passivation and anti-reflection properties prepared by mid-frequency magnetron sputtering

更新时间：2023-12-11

- Silicon nitride thin films with passivation and anti-reflection properties prepared by mid-frequency magnetron sputtering
- Acta Scientiarum Naturalium Universitatis SunYatseni Vol. 55, Issue 5, Pages: 31-36(2016)
- 作者机构：
  
  1. 中山大学太阳能系统研究所∥广东省光伏技术重点实验室,广东,广州,510006
  2. 
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2016，
  
  Published Online：25 October 2016，
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SHEN Guosheng, CHEN Wenli, LI Zhong, et al. Silicon nitride thin films with passivation and anti-reflection properties prepared by mid-frequency magnetron sputtering. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 55(5):31-36(2016)
DOI：

SHEN Guosheng, CHEN Wenli, LI Zhong, et al. Silicon nitride thin films with passivation and anti-reflection properties prepared by mid-frequency magnetron sputtering. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 55(5):31-36(2016) DOI：

摘要

使用中频磁控溅射法制备了具有光学减反射与电学钝化的复合功能的氮化硅（SiN

）薄膜，并对其结构和性能进行了综合研究。结果表明：在常规制绒硅片上沉积的两种不同折射率的单层SiN

减反膜表现出优异的光学性能，其在300~1 100 nm波段的平均反射率由镀膜前的14.86%下降到镀膜后的5.50%和6.58%；若采用多层的氮化硅（m-SiN

）+ 氮氧化硅（SiO

）薄膜作为减反层，则其平均反射率进一步下降到4.03%。同时，优化工艺制备得到的掺氢氮化硅（SiN

∶H）薄膜，表现出良好的电学钝化特性。试验中分别制备了两种复合结构的薄膜，即SiN

∶H(厚度15 nm) + m-SiN

+ SiO

与SiN

∶H(厚度30 nm) + m-SiN

+ SiO

复合薄膜，其平均反射率分别为5.88%和5.43%；把这两种薄膜用于晶体硅太阳电池上，其开路电压则都达到了575 mV，表现出良好的性能。

Abstract

Silicon nitride (SiN

) film with excellent quality in both passivation and antireflection was deposited by mid-frequency (MF) magnetron sputtering process. The structure

optical property and other relevant performances of the thin films were investigated. The results show that

in the range of 300-1 100 nm

the average reflection of the textured silicon decreased from 14.86% to 5.50% and 6.58% respectively by applying two different single layer of SiNx films. The average reflection further decreased to a value of 4.03% when a multilayer of m-SiN

+ SiO

film was applied. Meanwhile

a hydrogen doped silicon nitride (SiN

∶H) film was prepared for the passivation purpose. Based on the parameter optimization

two series of the composite films including SiN

∶H (15 nm in thickness) + SiN

+ SiO

and SiN

∶H (30 nm in thickness) + SiN

+ SiO

were prepared. The average reflections of the composite films reached at 5.88% and 5.43%

respectively. The films were then applied to the crystalline silicon solar cells

an open circuit voltage of 575 mV were achieved

indicating the composite film with a good passivation property.

关键词

太阳电池掺氢氮化硅薄膜减反膜钝化膜中频磁控溅射

Keywords

solar cellhydrogen doped silicon nitrideanti-reflection filmpassivation filmmid-frequency magnetron sputtering

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