The electronic structures‘ change of doped quantum dot
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The electronic structures‘ change of doped quantum dot
Acta Scientiarum Naturalium Universitatis SunYatseniVol. 57, Issue 4, Pages: 110-114(2018)
作者机构:
中山大学物理学院,广东,广州,510275
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Published:2018,
Published Online:25 July 2018,
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HE Chunshan, HUANG Gangming. The electronic structures‘ change of doped quantum dot. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 57(4):110-114(2018)
DOI:
HE Chunshan, HUANG Gangming. The electronic structures‘ change of doped quantum dot. [J]. Acta Scientiarum Naturalium Universitatis SunYatseni 57(4):110-114(2018)DOI:
The electronic structures‘ change of doped quantum dot
With the effective-mass approximation and the method of diagonalization of the Hamiltonian
the eigenvalue of energy and the eigen-wave-function of quantum dots (8 polarized electrons) have been calculated in the harmonic oscillator potential
and the clear electronic structures have been gained by the methods of one-body
two-body and three-body density functions. The electronic structures’ change is analyzed when the quantum dot is doped (adding one positive or negative electron). The results show that positive doping increases the aggregation of the central charge of the quantum dots
while the negative dopant forms the charge void at the center.